Abstract
The temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films on the basis of GeSb4Te7, GeSb2Te4, and Ge2Sb2Te5 perspective for the phase change memory application were investigated. It was revealed that two-channel conduction mechanism with the transport of charge carriers by the localized states in the valence band tail and delocalized states of the valence band is characteristic feature of these materials.
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