Abstract
The electrophysical characteristics of a multilayer memristive Au/Ta/ZrO2(Y)/TaOx/TiN structure have been studied. Electron and ion electret effects due to charge carrier trapping and ion migration polarization in the dielectric have been discovered. The influence of traps on electroforming processes and resistive switching has been established. The values of activation energy and ion and trap concentrations have been determined. The effect of resistive switching stabilization has been found, which is associated with the specific bilayer structure of TaOx and self-forming tantalum nanoclusters. The nanoclusters serve as electric field concentrators in the course of electroforming and subsequent resistive switching.
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