Abstract
The electrophysical characteristics of multilayer memristive structure Au/Ta/ZrO2(Y)/TaOx/TiN have been studied. The effects of electron and ion electrification associated with carrier trapping on traps and ion migration polarization in a dielectric are found. The effect of traps located in dielectrics on the effects of electroforming and resistive switching is established. The values of activation energy and concentrations for traps and ions are determined. The phenomenon of stabilization of resistive switching, which is associated with the features of the two-layer structure of YSZ/TaOx and self-assembled Ta nanoclusters, is found. Nanoclusters play the role of electric field concentrators in the process of electroforming and subsequent resistive switching.
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