Abstract
The modulation of electron and polar optical phonon states in an AlGaAs/GaAs/AlGaAs quantum well (QW) with an inserted thin AlAs barrier is considered. The OW width dependence of electron-phonon scattering rates are estimated. The large contribution to the change of the electron subband population, the photovoltaic effect, and the electron mobility in the QW accounts for the resonant intersubband scattering of electrons by interface phonons. The decrease of electron mobility limited by polar optical phonon scattering with increasing carrier concentration in the QW is established. The conditions for the increase of mobility in the QW by inserting the AlAs barrier are found.
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