Abstract
Using the method of series expansion, interface-phonon vibrational modes are calculated in the dielectric continuum model for the graded quantum well of ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As with a ${\mathrm{Ga}}_{0.6}$${\mathrm{Al}}_{0.4}$As barrier. The intrasubband and intersubband scattering rates are obtained as functions of quantum-well width. The results reveal that the behavior of interface phonon modes is very different from that in a square quantum-well structure. It is found that the electron--interface-phonon scattering rates can be changed remarkably in a graded quantum-well structure compared with those in a square quantum-well structure, which is useful for some device applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
