Abstract
Within the dielectric continuum model, the effect of an applied longitudinal electric field on electron-interface-phonon scattering is studied for the graded quantum well of Ga 1− x Al x As with a Ga 0.6Al 0.4As barrier, and compared with that in a staircase-like square quantum well structure. The electron subband and interface phonon modes are calculated using the method of series expansion. The intrasubband and intersubband scattering rates are obtained as functions of the applied electric field, and the influence of the composition gradient of a graded quantum well on the scattering rates is shown. It is found that the variation of the interface-phonon scattering rates with the applied electric field in a graded quantum well structure is significantly different from that in a staircase-like square quantum well structure. However, there is much less difference in the variation of the total scattering rates between the two structures.
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