Abstract
The electromechanical properties of multilayer microwave capacitance structures with two ferroelectric films in the paraelectric state are analysed. A film bulk acoustic wave resonator (FBAR) with about two times (approximately octave) resonance frequency switching is demonstrated. The switching phenomenon is due to the application of a unidirectional or oppositely directed DC control E-field to ferroelectric layers that results in the excitation of different acoustic eigenmodes in the resonator structure.
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