Abstract
WSe2 crystals grown by Direct Vapour Transport (DVT) technique. The structural properties of as grown crystals have been measured by X-ray diffraction analysis. The temperature dependence Hall coefficient study revealed that the grown crystal shows mixed conduction behavior in the temperature region 300K to 10K. The variation of mobility with temperature, also show that the WSe2 possesses a mixed scattering mechanism. The Hall scattering factor calculated from the temperature dependent Hall coefficient and carrier density. Detailed analysis of temperature dependent Hall effect data thus yields information concerning the electronic transport properties of tungsten diselenide semiconducting layered materials.
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