Abstract
We present a study of the magnetoresistivity of thin film MnSi in high magnetic fields. We establish that the magnetoresistivity can be understood in terms of spin fluctuation theory, allowing us to compare our data to studies of bulk material. Despite of a close qualitative resemblance of bulk and thin film data, there are clear quantitative differences. We propose that these reflect a difference of the spin fluctuation spectra in thin film and bulk material MnSi, and discuss possible causes.
Highlights
The cubic helimagnet MnSi has intrigued researchers in the field of solid state magnetism for over half a century [1,2,3]
For direct comparison to the results from [4], we studied MnSi bulk crystals synthesized by the Czochralski tri-arc method
While all single crystals MnSi have the same transition temperature TN = 29 K into the helimagnetic state and exhibit a similar temperature dependence of the resistivity ρ, absolute values of ρ vary by more than an order of magnitude. It suggests that the determination of the absolute value of ρ is affected by cracks in the single crystalline samples
Summary
N Steinki, D Schroeter, N Wächter, D Menzel, H W Schumacher, I Sheikin and S Süllow. N Steinki, D Schroeter, N Wächter, D Menzel, H W Schumacher, I Sheikin and S Süllow1 Original content from this Abstract work may be used under We present a study of the magnetoresistivity of thin film MnSi in high magnetic fields. Compare our data to studies of bulk material. Any further distribution of this work must maintain thin film data, there are clear quantitative differences. We propose that these reflect a difference of the attribution to the author(s) and the title of spin fluctuation spectra in thin film and bulk material MnSi, and discuss possible causes.
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