Abstract
AbstractWe investigate and compare the electronic transport in ambipolar SiNWs as a function of the metal choosen for contact deposition. The wires are grown by Au‐catalyzed vapour‐transport and exhibit crystalline cores about 15–20 nm in thickness. The suitability of Ti and Ni contacts on SiNWs is evaluated in terms of contact resistance and band‐alignment. The beneficial effect of a rapid‐thermal‐annealing at mild temperatures (400 °C) is also investigated. We observe that annealed Ni contacts yield the lowest device resistance and highest ON/OFF ratio. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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