Abstract
Shubnikov-de Haas (S-dH) and Van der Pauw Hall-effect measurements on InP/InAs/In x Ga 1− x As double quantum wells grown by metalorganic chemical vapor deposition have been carried out to demonstrate the existence of the two-dimensional electron gas (2DEG) in the double quantum wells. Transmission electron microscopy measurements showed that Inas and In 0.53Ga 0.47As quantum wells were separated by an In 0.25Ga 0.75As potential barrier in an active region. The results for the S-dH data and quantum Hall-effects at 1.5 K have demonstrated clearly the existence of a 2DEG in the quantum well. The fast Fourier transformation results for the S-dH data clearly indicate the occupation of two subbands in the coupled quantum wells. Electronic subband energies and wavefunctions in the quantum wells were calculated by a self-consistent method taking into account exchange-correlation effects. The first excited subband wavefunction in the asymmetric quantum well is weakly coupled over both InAs and In 0.53Ga 0.47As wells.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call