Electronic structure of the high-temperature Ge(1 0 0) surface studied by valence band photoemission

Abstract

The electronic structure of the Ge(1 0 0) surface has been investigated by means of synchrotron radiation valence band photoemission in a temperature range spanning from room temperature to 1190 K close to the bulk melting temperature. The surface is observed to become increasingly metallic up to the (2 × 1) to (1 × 1) phase transition temperature which takes place at about 960 K. Above this temperature the electronic structure of the surface does not change appreciably, indicating the persistence of a dimerized and disordered surface up to temperatures close to the melting point.