Abstract
SnO 2 doped with La, Ce, Sm, Zn, Ca, Al and Sb was prepared by sol-gel technique and characterized by TEM, BET, XPS and XAES. The effect of the dopants on the grain sizes of SnO 2 was described and especially the effect of dopants on the distribution of the electronic state density (DESD) of Sn4d orbital was studied deeply by using X-ray-induced Auger electron spectroscopy (XAES). It was observed that the dopants could influence not only the grain sizes of SnO 2 but also electronic structure of SnO 2 , as well as the stability of the doped SnO 2 samples. The experiment results indicated that the structure and stability of SnO 2 film could be improved by the chemical modification of the dopants.
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