Abstract
Abstract Density Functional Theory employing periodic boundary conditions at the VSXC/6-31G level is used to calculated the dependence of the energy levels of phosphorene nanoribbons on the wave vector. The ribbons are shown to be small band gap semiconductors having band gaps at K=0 less than 0.81 eV. The electronic structure is shown to be dependent on the direction in the unit cell in which the ribbons are formed. The unit cell is predicted to be a ground state triplet suggesting that ribbons formed from it could be ferromagnetic semiconductors. The effect of hole (Si) doping and electron (S) doping on the electronic structure of the ribbons is investigated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
