Abstract
Abstract X-ray photoelectron core-level and valence-band spectra for pristine and Ar + -ion irradiated (0 0 1) surfaces of AgCd 2 GaS 4 and AgCd 2 GaSe 4 single crystals grown, respectively, by the Bridgman method and the method of direct crystallization have been measured in the present work. The X-ray photoelectron spectroscopy (XPS) results reveal high chemical stability of (0 0 1) surfaces of AgCd 2 GaS 4 and AgCd 2 GaSe 4 single crystals. Electronic structure of AgCd 2 GaS 4 has been calculated employing the full potential linearized augmented plane wave method. For the AgCd 2 GaS 4 compound, the X-ray emission bands representing the energy distribution of the valence Ag d-, Cd d-, Ga p- and S p-like states were recorded and compared on a common energy scale with the XPS valence-band spectrum. The theoretical and experimental data regarding the occupation of the valence band of AgCd 2 GaS 4 were found to be in excellent agreement to each other. Second harmonic generation (SHG) efficiency of AgCd 2 GaS 4 by using the 320 ns CO laser at 5.5 μm has been recorded within the temperature range 80–300 K. Substantial increase of the photoinduced SHG which in turn is substantially dependent on the temperature has been detected for the AgCd 2 GaS 4 compound.
Published Version
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