Electronic structure of diluted magnetic semiconductor superlattices: In-plane magnetic field effect

Abstract

The electronic structure of diluted magnetic semiconductor (DMS) superlattices under an in-plane magnetic field is studied within the framework of the effective-mass theory; the strain effect is also included in the calculation. The numerical results show that an increase of the in-plane magnetic field renders the DMS superlattice from the direct band-gap system to the indirect band-gap system, and spatially separates the electron and the hole by changing the type-I band alignment to a type-II band alignment. The optical transition probability changes from type I to type II and back to type I like at large magnetic field. This phenomenon arises from the interplay among the superlattice potential profile, the external magnetic field, and the $\mathrm{sp}\ensuremath{-}d$ exchange interaction between the carriers and the magnetic ions. The shear strain induces a strong coupling of the light- and heavy-hole states and a transition of the hole ground states from ``light''-hole to ``heavy''-hole-like states.