Electronic structure of Bi lines on clean and H-passivated Si(100)

Abstract

By means of scanning tunnelling microscopy and spectroscopy, we have investigated theelectronic structure of Bi nanolines on clean and H-passivated Si(100) surfaces. Maps of thelocal density of states (LDOS) images of the Bi nanolines are presented for the first time.The spectra obtained for nanolines on a clean Si surface and the LDOS imagesagree with ab initio predicted spectra for the Haiku structure. For nanolines ona H-passivated surface, the spectra obtained suggest that the Bi nanoline maylocally pin the surface Fermi level, and the LDOS images taken at low bias show adistribution of states different to what was expected at the Bi nanolines. The results arediscussed with respect to use of the nanolines as atomic wire interconnections.