Electronic structure of amorphous InGaO 3(ZnO) 0.5 thin films

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The electronic structure of amorphous semiconductor InGaO 3(ZnO) 0.5 thin films, which were deposited by radio-frequency magnetron sputtering process, was investigated using X-ray photoelectron spectroscopy and O K-edge X-ray absorption spectroscopy. The overall features of the valence and conduction bands were analyzed by comparing with the spectra of Ga 2O 3, In 2O 3, and ZnO films. The valence and conduction band edges are mainly composed of O 2 p and In 5 sp states, respectively. The bandgap of the films determined by spectroscopic ellipsometry was approximately 3.2 eV. Further, it is found that the introduction of oxygen gas during the sputter-deposition does not induce significant variations in the chemical states and band structure.