Electronic structure of acceptor-donor complexes in silicon

Abstract

The electronic structure of trimer acceptor-donor complexes in silicon Si clusters is studied using the ab initio discrete variational-Xα molecular-orbital (MO) method. The trimer complexes In2D (D=phosphorus P, arsenic As, antimony Sb, or bismuth Bi) consist of two indium In acceptor elements and a centered donor element D from the group V elements. Calculations are performed under the assumption that the three atoms are arranged in the nearest neighbor substitutional trimer configuration. Results indicate that the trimer complexes act as shallower acceptors having smaller ionization activation energies than In acceptor. The potential of In2D as an acceptor in Si is then discussed and In2D is proposed as a promising acceptor for the formation of channels and source/drains in ultralarge scaled integration.