Electronic Structure of 3d Transition-Atom Impurities in Semiconductors

Abstract

The chapter presents a discussion on electronic structure of three-dimensional (3d) transition-atom impurities in semiconductors. The effects of 3d impurities in semiconductors have preoccupied the field since the invention of the transistor. Reliable experimental data for germanium and silicon became available quite early. The chapter presents an in-depth review of the present status of the field. This review contains a most careful and detailed exposition of various aspects of the subject, presented, as the author states using “the combined points of view of theoretical solid-state physics, semiconductor physics, and classical inorganic chemistry.” The chapter discusses the great progress that has been made. The chapter presents a review on the recent developments vis a vis the new experimental methodologies and the classical phenomenological approaches used earlier to understand deep 3d impurities. The author attempts to present a coherent picture of the understanding of isolated 3d impurities in cubic semiconductors from the combined points of view of theoretical solid-state physics, semiconductor physics, and classical inorganic chemistry.