Abstract
Thin films of amorphous chalcogenide with composition of Ge22Sb22Te56 (thickness d=250nm) and silver film (thickness d=50nm) on top of chalcogenide film were deposited by thermal evaporation technique. Photo-diffusion of Ag into the amorphous Ge2Sb2Te5 thin films has been carried out by illuminating the prepared Ge-Sb-Te:Ag bilayer with halogen lamp. The photo-diffused silver depth profile was traced by means of Time of Flight Secondary Ion Mass Spectroscopy. The films remain amorphous after Ag photo-diffusion into the amorphous Ge2Sb2Te5 films. The composition of Ge2Sb2Te5 thin films and the amount of Ag photo-diffused has been gathered from Electron Probe Micro-analyzer having a Wavelength Dispersive Spectrometer. The composition of the films was found to be very close to the bulk used to deposit films and the amount of Ag photo-diffused was ∼5.20at.%. Changes in the electronic structures of Ge2Sb2Te5 film on Ag photo-diffusion were studied using X-ray photoelectron spectroscopy. The incorporation of silver also increases the optical band gap of the film due to the decrease in the density of defect states on Ag photo-diffusion.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
