Abstract

The electronic structure and magnetic properties of 3d transition metal (Cr, Co)-codoped 4H–SiC were studied by density functional theory within GGA methods. The results show that all doped magnetic atoms have high magnetic properties in both Cr-doped and Co-doped 4H–SiC, resulting in the net magnetic moments of 3.03, 3.02 μ B for Si 35 CrC 36 and Si 35 CoC 36 . The electronic density of states reaches the peak at Fermi level, which is beneficial to the electronic transitions, indicating that Cr-doped 4H–SiC is a semi-metallic material. In addition, the magnetic properties of (Cr, Co)-codoped 4H–SiC were also calculated. The results show that the (Cr, Co)-codoped 4H–SiC system has more stable ferromagnetic properties with ΔE F M of −244.3 meV, and we estimated T C of about 470.8 K for the (Cr, Co)-codoped 4H–SiC system. The (Cr, Co)-codoped 4H–SiC can be ferromagnetic through some mechanism based on hybridization between local Cr:3d, Co:3d and C:2p states. These interesting discoveries will help promote the use of excellent SiC-based nanomaterials in spintronics and multi-function nanodevices in the near future.

Highlights

  • Dilute magnetic semiconductors (DMSs) have stimulated extensive attention because of their important applications in spintronics [1,2,3,4,5,6]

  • The results show that the maximum magnetic moment is 3.03 μB

  • The results show that the spin up and spin down of the total density of states (DOS) are asymmetric, indicating that the Co-doped 4H–SiC

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Summary

Introduction

Dilute magnetic semiconductors (DMSs) have stimulated extensive attention because of their important applications in spintronics [1,2,3,4,5,6]. As far as experiments are concerned, Song et al [20] studied the magnetic properties of 6H–SiC doped with Mn atoms. They found that both the doping concentration of Mn and the defects affected ferromagnetism. The electronic structure and magnetic properties of the transition metal-doped with SiC were studied. Ma et al [23] studied the magnetic properties of TM (TM = Cr, Mn, Fe) atom doped 6H–SiC. As far as we know, theoretical studies on the magnetic properties of SiC-base wide band-gap semiconductors doped with. The mechanism of local magnetic moment and ferromagnetic properties in (Cr, Co) co-doped 4H–SiC was studied in this paper

Model and Computational Method
Cr and Co-doped 4H–SiC
Conclusions

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