Abstract
The energy band-lineup and the electronic structure of NO2-exposed H-terminated diamond/Al2O3 heterointerface have been investigated by synchrotron radiation photoemission and x-ray absorption near-edge structure (XANES) measurements. It is found that the energy band-lineup is stagger-type, so-called type-II, with its valence band discontinuity of as high as 3.9 eV and its conduction band discontinuity of 2.7 eV. The valence band maximum of the H-terminated diamond surface is positioned at Fermi level as a result of high-density hole accumulation on the diamond side. The XANES measurement has shown that the oxygen-derived interface state locates at about 1–3 eV above the Fermi level.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
