Abstract
Specific heat and electrical resistivity in neutron irradiated Si:P have been measured with a special interest in electronic states near the metal-insulator (MI) transition induced by Anderson localization. The isochronal annealing procedure on a neutron irradiated specimen was adopted to control finely not only the effective carrier concentration but also the potential disorder in a single specimen. We investigated the effect of the compensation on the density of states at Fermi level N( E F), localization length of the wave function ξ, critical exponent s′ and critical concentration n c near the MI transition.
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