Abstract
“Regularly stepped” and “defective” surfaces of Cu(755) were prepared by low- and high-temperature annealing, respectively, of a clean specimen. Electronic states on both surfaces were studied by angle-resolved ultraviolet photoelectron spectroscopy using synchrotron radiation. On the defective Cu(755), we found a new photoelectron peak due to surface defects just below the Fermi level. The dispersion profile of the defect state is derived to be almost flat, which demonstrates the localized nature of the defects. High activity to oxygen adsorption of the defect state was revealed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
