Abstract
The discovery of two-dimensional electron gas at the LaAlO3 and SrTiO3 heterointerface has attracted great interest. When such kind of three-dimensional heterostructure extends to two-dimensional, one-dimensional electron gas (1DEG) might be generated at the interface. Here, we studied the electronic properties of one-dimensional interfaces in 2D (MoS2)m/(Mo2S3)m lateral heterostructures by first-principles calculation. We found that the heterostructures will achieve transformation from semiconductor to metal and 1DEG will be generated when the width m is larger than a critical value. Besides, our analysis points out that the charge transfer caused by the polarity discontinuities is the fundamental reason for generating 1DEG.
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