Optical emission from the one-dimensional electron gas in narrow modulation-doped GaAs/(InGa)As/(AlGa)As quantum wires fabricated by lateral top barrier modulation

Abstract

We report on the fabrication and photoluminescence characterisation of n-type doped quantum wires, which are based on a modulation-doped GaAs/(InGa)As/(AlGa)As quantum well structure, as used in inverted high electron mobility transistors. Lateral patterning was performed by electron beam lithography followed by a selective wet etch process to remove the n-type doped GaAs top barrier between the wire regions. The removal of the top barrier was verified by micro-Raman spectroscopy. Spatially indirect emission from the one-dimensional (ID) electron gas formed in the quantum wires is observed in low-temperature photoluminescence, even for the narrowest geometrical wire width of 23 nm. The emission shows a blue-shift for wire widths below 100 nm, which amounts to up to 60 meV for the narrowest wires. PACS: 78.66.Fd, 73.20.Dx, 78.55.Cr