Electronic properties of the FeSe/STO interface from first-principle calculations

Abstract

We perform first-principle calculations of the FeSe monolayer on STO with the focus on three central aspects. First, compared to experiment, the bulk lattice constant of FeSe is too small in LDA, PBEsol and Perdew–Burgke–Ernzerhof (PBE) type exchange-correlation (xc) functionals while in bulk SrTiO3 (STO) LDA over-binds, PBE under-binds and PBEsol agrees best with experiment. Thus, the strain in the FeSe monolayer on STO depends on the xc functional and, especially in the non-magnetic state, is strongly overestimated and best described in PBEsol. In agreement with earlier work, we find that the band structure of the checkerboard antiferromagnetic configuration agrees best with experiment where, in addition, the relative strain on FeSe is best described. Second, our focus is on the crystal structure of the interface itself. The FeSe/STO distance depends weakly on the presence of magnetism and PBE results agree best with recent experimental data. We find that a double -layer below the FeSe relaxes to a structure in disagreement with experimental data. On the other hand, considering the effect of oxygen-vacancies in the single terminated slab within the virtual crystal approximation, in agreement with recent experiment, the FeSe monolayer Ti layer distance increases for a small vacancy concentration (<20%). Third, we investigate the charge-transfer to FeSe due to oxygen-vacancies in STO. Interestingly, we find negligible charge transfer for small concentrations—only above 20% a significant charge transfer is observed.