Abstract
We report on comparative measurements of the electronic properties of multiple Si δ-doped GaAs structures grown by conventional molecular beam epitaxy (MBE) and by migration-enhanced epitaxy (MEE) at a substrate temperature of 540°C. Samples were studied by Shubnikov-De Haas and Hall measurements. Results suggest that for multiple δ-doped samples grown at high substrate temperatures, MBE is a more effective growth technique.
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