Abstract
We have prepared Ga-doped a-Si films by PECVD, by the addition of metalorganic Ga compounds to the silane. We give here a first account on electrical, optical and structural properties. The samples were prepared with the deposition parameters within the usual range. With increasing Ga content the room temperature dark conductivity of a-Si first drops to the value of 8×10 −12 Ω −1 cm −1 which is typical for compensated a-Si and then raises similar to the boron doping case. There is, however, an important difference: Since Ga is a metal, metallic conductivity can be attained at large Ga concentration.
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