Abstract
Aluminium-doped zinc oxide films with 91% transmittance in the visible range and electrical resistivity of the order of 10<sup>-3</sup> Ωcm were fabricated by radio frequency magnetron sputtering in Ar atmosphere starting from a target of ZnO mixed with 2% wt Al<sub>2</sub>O<sub>3</sub>. A systematic study of the deposition conditions such as substrate temperature, working gas pressure, radio frequency power, magnetron strength, target to substrate distance, etc., was performed when searching for improved electrical and optical performances of the films. Several deposition conditions govern the film characteristics, so that films with same good optical and electrical properties can be obtained by opportunely combining different deposition parameters.
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