Abstract
Low energy electron diffraction (LEED), Auger electron spectroscopy (AES), and photoemission yield spectroscopy (PYS) measurements are performed on a set of 2 × 1 reconstructed silicon (111) surfaces with different bulk dopings as a function of gold coverage θ, from zero to a few hundred monolayers, obtained by UHV evaporation on a sample kept at room temperature. Our measurements show the formation of an Au-Si alloy with the first two monolayers of gold deposit which induces a decrease of the ionization energy Φ by about 0.15 eV while no variation of the work function is observed. In the effective density of states, the double structure related to the 2 × 1 reconstruction is then replaced by a single peak at ⋍ 0.4 eV below the valence band edge. At larger coverages, the Au-Si alloy remains on top of a gold layer which forms an abrupt interface with the Si substrate.
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