Room temperature adsorption and growth of Ga and In on cleaved Si(111)

Abstract

Low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and photoemission yield spectroscopy (PYS) measurements have been performed on a set of ultrahigh vacuum cleaved Si(111) surfaces with different bulk dopings as a function of Ga or In coverage θ. The metal layers are obtained by evaporation on the unheated substrate and θ varies from zero to several monolayers (ML). First, the 2×1 reconstruction of the clean substrate is replaced by a 3 × 3 R30° structure at 1 3 ML, meanwhile the dangling bond peak at 0.6 eV below the valence band edge E vs is replaced by a peak at 0.1 eV for Ga or 0.3 eV for In, below E vs. At the same time, the ionization energy decreases by 0.4 eV (Ga) or 0.6 eV (In), while the Fermi level pinning position gets closer to the valence band edge by about 0.1eV. Upon increasing θ, new LEED structures develop and the electronic properties keep on changing slightly before metallic islands start to grow beyond θ ∼1 ML.