Abstract
We show successful patterning of single-walled carbon nanotube (CNT) films down to 100 nm lateral dimensions and study their transport properties as a function of device dimensions. The results show that resistivity is independent of device length, while increasing over three orders of magnitude as device width and thickness shrink. We also investigate geometry-dependent resistivity scaling in CNT films using Monte Carlo simulations. These simulations can model and fit the experimental results and also determine the effect of parameters such as nanotube length and density on resistivity scaling trends. We also study the Schottky contact between CNT film and GaAs by fabricating and characterizing Metal-Semiconductor-Metal photodetectors with CNT film electrodes. We determine the mechanisms responsible for the transport and extract the Schottky barrier height of CNT film contacts. Furthermore, we compare the dark and photocurrent of the CNT film-based photodetectors with standard metal-based ones.
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