Abstract
We report the first electronic-property results on atomic-layer deposited Al 2 O 3 /thermal-nitrided SiO 2 stacking dielectric on n-type 4H SiC. The effects of the ultrathin thermal-nitrided SiO 2 (2, 4. and 6 nm) on the SiC-based metal oxide semiconductor (MOS) characteristics have also been investigated, compared, and explained. A significant improvement in dielectric reliability and dielectric breakdown field has been observed after an ultrathin nitrided oxide has been introduced between Al 2 O 3 and SiC. The best reported results were obtained from Al 2 O 3 stacked with the thickest nitrided oxide (6 nm).
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