Abstract
Optical and electrical properties of sputtered Ge2Sb2Te5 films in amorphous and crystalline states have been studied. The optical band-gaps of amorphous, cubic (NaCl-type), and hexagonal Ge2Sb2Te5 are 0.74, 0.5, and 0.5 eV, respectively. Electrically, the amorphous and cubic states behave as semiconductors with activation energies of 0.45 and 0.14 eV, while the hexagonal state is metallic. The resistivity decreases slightly at the melting point of ∼600°C. All the states show p-type thermoelectric power, in which the amorphous and the cubic state have the activation energies of 0.3 and 0.14 eV. Carrier parameters and electronic densities-of-states are estimated and considered.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
