Electronic properties of a one-dimensional channel field effect transistor formed by molecular beam epitaxial regrowth on patterned GaAs

Abstract

A high mobility electron gas was grown by molecular beam epitaxy on patterned GaAs consisting of a p-GaAs/n-GaAs multilayered structure. By contacting to the p-GaAs and n-GaAs layers separately and applying the appropriate bias voltages, we were able to laterally modulate the electron gas to form narrow conduction channels. At 1.5 K we obtain an electron mobility of 5×105 cm2/V s and when operated in the field effect transistor mode a transconductance of 50 ms/mm for a device with a 50-μm source/drain separation.