Electronic properties, interface contact and transport properties of strain-modulated MS2/borophosphene and MSeS/borophosphene (M = Cr, Mo, W) heterostructure: Insights from first-principles

Abstract

Controlling the interface contact performance to form low-resistance ohmic contact is of great importance in designing low-power two-dimensional (2D) devices. Here, we explore a 2D semi-metal with Dirac cones, borophosphene, for different types of contact with MS2, MSeS/borophosphene (M = Cr, Mo, W) using density functional theory (DFT) and non-equilibrium Green's function (NEGF) methods. The results indicate that under no strain, different van der Waals heterojunctions (vdWHs) exhibit an n-type (p-type) Schottky contact type, with the CrS2/borophosphene vdWHs exhibiting a lower barrier height (Φn = 0.08 eV). Next, we find that the in-plane strain is more efficient than the vertical strain. Under in-plane strain modulation, the contact type will change from Schottky to Ohmic contacts as the tensile strain increases. Similarly, the contact type will change from Schottky to semiconductor as the compressive strain increases. Under the influence of vertical strain, the CrS2/borophosphene vdWHs transition into ohmic contact only when the interlayer spacing increases to above 0.4 Å. Finally, we study the ohmic contact formation and transport characteristics based on the device angle. These findings demonstrate that interface contact types can be effectively regulated by strain, which is crucial for the design and manufacturing of novel nano electronic devices composed of borophosphene based vdWHs.