Abstract
The presented work investigate the impact of aluminium composition on chemical states and electronic properties of AlxGa1-xN/GaN (x = 0.45, 0.62 and 0.75) heterostructures using photoemission spectroscopy. Extensive core level and valence band analysis revealed significant variation in chemical coordination, electron affinity and valence band hybridization with aluminium composition. The variation in aluminium molar fraction lead to perturbed energetics and changed the oxygen chemisorption mechanism at the surface (i.e. electron-counting & oxide-stoichiometry). AlxGa1-xN surfaces with lower aluminium composition also pursued higher density of donor like surface states. However, the electron affinity of the films decreased from 2.6 to 2.1 eV with increment in aluminium composition and material bandgap.
Published Version
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