Abstract
Using MNOS diodes with a wide range of device parameters such as the thickness of SiO2 films, conductivities of Si3N4 films, and conductivities and carrier types of Si substrates, C-VG and VFB-VG curves were measured as a function of the measurement temperature, heat treatment and maximum applied voltage. Two types of C-VG curves and the transition from one type to the other were observed. It was found that a correspondence between the type of C-VG curve and the direction of the shift of VFB, observed in the grown samples such as those described in a previous paper persisted even after the transition from the one to the other types of C-VG curves had occurred. In addition, two types of G-VG curves were also observed. These results were qualitatively explained by a model described before.
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