Abstract
From a theoretical understanding of rocking curves of extremely asymmetric X-ray diffraction from silicon crystals on which SiO2 films were thermally grown, both of the density and the thickness of the films were determined. Inherent measurement errors due to properties of the substrate were eliminated by dividing the intensity of the diffracted X-rays from the substrate with the film by the intensity without the film. The measurement results of the density indicated that the range of structural imperfection in SiO2 films varies with the conditions of oxidation and post-oxidation annealing.
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