Electronic nanolithography as a basic nanoavionics technology

Abstract

The need for further development of electronic components of aviation and rocket-space information and commu-nication systems towards nanoelectronics brings nanolithography to the forefront as its basic technology. A promis-ing nanolithography method is electron nanolithography (ENL). Advantages of ENL: 1) potential resolution - less than 2 nm, 2) possibility of direct recording without the use of masks, 3) possibility of using standard film resistors, 4) low density of defects in circuits, 5) controllability using electric and magnetic fields, 6) possibility use of ready-made industrial installations (microscopes, lithographs for masks). This review examines the principles of con-struction, the history of creation and the current state of ENL, with an emphasis on its features, as well as its classi-fication and stages of development. In addition, one of the main problems of ENL that requires a solution is con-sidered – the development of special electronic resists and methods for increasing their resolution and sensitivity.