Abstract
Ion beam mixing of multilayer thin films using MeV ion irradiation is described in this paper. Iodine ion beam irradiation at 90 and 100 MeV on Fe/Si, Ti/Si, Fe/Ti, Zr/Si and Zr/Ti multilayer thin films are carried out such that electronic losses predominate and the ions do not get implanted in the films. Ion irradiation fluences range from 1×10 13 ions/cm 2 to 1×10 14 ions/cm 2. Depth profiles of the films at various interfaces are measured using SIMS technique. The interface profile in each case is fitted with a complementary error function to determine the diffusion lengths of species A in species B or vice versa in multilayer A/B films. Mixing is observed at Fe/Si, Ti/Si and Zr/Si interfaces and no mixing at Fe/Ti and Ti/Zr. The mixing rate in Si/Ti films is higher at an ion dose of 5×10 13 ions/cm 2 than at 2.5×10 13 ions/cm 2. In an Fe/Si system, complete mixing is observed. It is concluded that the amorphous nature of Si is responsible for inducing mixing in the present experiments.
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