Abstract
For over 15 years, the number of studies on graphene electronics has not ceased growing. The rich physics, a set of outstanding properties, and the envisioned range of potential applications have consolidated graphene as a research field in its own. In this Research Update, we address a specific case of graphene for electronics, epitaxial graphene on silicon carbide (SiC) substrates. This paper mainly focuses on the electronic interface of graphene with metals. The first part of this paper describes the most characteristic aspects of the growth of epitaxial graphene on SiC wafers, and the main techniques for graphene material characterization are presented first. The main objective of this paper is to gather and discuss the most representative studies on the graphene–metal interface and the strategies employed to obtain low values for the contact resistances, which is a key feature for achieving the best performance of any graphene electronic devices. To benchmark developments in specifically epitaxial graphene on SiC, we include the results on mechanically exfoliated graphene from HOPG, as well as chemical vapor deposition graphene. In the last part of this paper, relevant device architectures for electrically gating graphene are briefly discussed.
Highlights
Isolating a single-atom thick sheet of high-quality graphite, graphene, and revealing its extraordinary electronic properties, has had a massive and unprecedented impact in electronics research
Presented, we were invited to think outside the silicon box,[4] based on graphene potential, meaning to fully exploit, e.g., its linear dispersion and extreme charge carrier mobility values for new or truly advanced electronic devices (Fig. 1)
The excellent DC and RF performance of a EG field effect transistors (EGFET) with Quasi Free-Standing (QFS) bilayer graphene on 4H–silicon carbide (SiC), via H2 intercalation, was obtained using top-gate T-shaped with length 200 nm and 100 nm
Summary
Isolating a single-atom thick sheet of high-quality graphite, graphene, and revealing its extraordinary electronic properties, has had a massive and unprecedented impact in electronics research. Recalling a naïve promise of a potential substitute to silicon already started by the previous breakthrough of single walled carbon nanotubes, graphene and understandably, reactivated some skepticism. Presented, we were invited to think outside the silicon box,[4] based on graphene potential, meaning to fully exploit, e.g., its linear dispersion and extreme charge carrier mobility values for new or truly advanced electronic devices (Fig. 1). While excellent quality graphene is routinely and since long produced by chemical vapor deposition (CVD),[5] it is deposited extrinsically to the silicon substrate; costly and demanding transfer is required. The processing sequence is currently the main limitation hindering the full deployment of graphene potential in electronics
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