Electronic energy structure of AlxSi1−x C wide-gap semiconductor crystals

Abstract

The electronic structure of silicon carbide solid solutions with aluminum has been studied within the limits of a single approximation. The local coherent potential method in terms of multiple scattering theory was used. The electronic spectrum was analyzed in comparison with the experimental X-ray spectra of silicon, aluminum, and carbon. The nature of the observed features of the electronic spectrum is interpreted, and Al-Si covalent binding in solid solutions is found. Formation of vacant states with energies of 1 Ry and decreased forbidden gap in the XANES spectrum at higher aluminum contents in crystal are discussed.