Abstract
Experiments are described that resulted in the spatial scanning of the coherent emission of a GaAs junction laser at 77°K. By electrically separating the p side of the junction into several sections the current distribution is deliberately made nonuniform. Necessary conditions for the continuous shifting of the beam across the width of the diode are given. Several geometries, satisfying these conditions, are considered and evaluated with respect to simplicity of experimental verification. It was found possible to actually scan the beam continuously across the entire width of the diode (about ½ mm) by employing two fixed, pulsed, current sources and only one variable resistor.Nonhomogeneities in emission intensity are related to the presence of ``spots'' reported since the early measurements in GaAs lasers. It is shown that these ``spots'' are determined by material parameters in the vicinity of the junction itself rather than by local conditions which might be caused by the current distribution.
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