Abstract
In this letter, we study the optical properties of GaN1−xSbx thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 °C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model that is applicable to highly mismatched alloys such as GaN1−xSbx in the entire composition range. The presented model allows us to more accurately determine the band gap as well as the band edges over the entire composition range thereby providing means for determining the composition for, e.g., efficient spontaneous photoelectrochemical cell applications.
Highlights
In this letter, we study the optical properties of GaN1ÀxSbx thin films
In films grown under Ga–rich conditions, the optical properties were dominated by defect states and the absorption edge was not very sensitive to the Sb concentration
Similar to the GaN1ÀxAsx films, sharp optical absorption edges shifting towards energies of $0.6 eV at x 1⁄4 0.66 were measured for the GaN1ÀxSbx films exhibiting an amorphous structure for x > 0.06
Summary
We study the optical properties of GaN1ÀxSbx thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model that is applicable to highly mismatched alloys such as GaN1ÀxSbx in the entire composition range.
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