Electronic aspects of the optical-absorption spectrum of the EL2 defect in GaAs.

Abstract

As far as its optical properties are concerned, the EL2 defect seems to be the same as the isolated As Ga arsenic antisite defect in GaAs. Although it is widely accepted that lattice relaxation plays a role in determining the optical absorption of EL2, there are now reasons to question just how much lattice relaxation occurs. As an initial step towards resolving this issue, this paper presents a calculation of the optical absorption of the isolated As Ga defect in which the calculational emphasis is on a realistic description of the electronic states