Abstract
This chapter discusses EL2 Defect in gallium arsenide (GaAs). The most important task for the studies of imperfections in crystals is to determine their defect nature. For physicists, this is a fascinating problem that also influences materials applications. Through the identification of a defect, it is possible to control its concentration within thermodynamic limits, and to understand the defect behavior during growth and crystal processing. EL2 basically controls the electrical and optical properties of GaAs and its existence makes it possible to achieve thermally stable semi-insulating (SI) GaAs—the key material in integrated circuit technology. The results of characterization of a wide range of EL2 properties by transport, capacitance, and optical and electron paramagnetic resonance (EPR) techniques are presented in the chapter, followed by a review of the competing models of the EL2 defect. In conclusion, both the commonly accepted and the controversial features of the nature of EL2 are discussed. The EL2 defect in GaAs is created under arsenic-rich conditions. Its concentration can be controlled to some extent by stoichiometry change during crystal growth.
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