Electronic and structural properties of femtosecond laser sulfur hyperdoped silicon pn-junctions

Abstract

The structural properties of femtosecond laser sulfur hyperdoped silicon pn-junctions are correlated to electronic transport characteristics at the interface. The depth of the planar space charge region obtained from cross-sectional electron beam induced current analysis is in good agreement with the sulfur concentration depth profile, derived from secondary ion mass spectroscopy. EBIC signals from the crest regions of the laser structured surface reveal increased recombination activity. Using transmission electron microscopy, we show that such recombination is related to dislocations, which are most probably highly decorated with sulfur.